Transistor and Amplifier
Premium coaching notes on transistor structure, p-n-p and n-p-n action, CB/CE/CC configurations, current gains, characteristics, amplifier action, switching, oscillator basics, numericals and PYQs.
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1. Transistor Structure
A junction transistor is a three-layer, two-junction semiconductor device. It has three terminals: emitter E, base B and collector C.
Emitter
Emitter is heavily doped and injects charge carriers into the base.
Base
Base is very thin and lightly doped. Only a small fraction of carriers recombine in the base.
Collector
Collector is moderately doped and physically larger. It collects most carriers coming from emitter.
2. PNP and NPN Transistor Action
For normal transistor action, emitter-base junction is forward biased and collector-base junction is reverse biased.
NPN Transistor
Electrons are majority carriers. Electrons are injected from n-type emitter into the thin p-type base. A small part recombines in the base producing IB, while most electrons reach the collector and produce IC.
PNP Transistor
Holes are majority carriers. In p-n-p transistor, holes are injected from emitter into base. A small percentage recombines in base and produces base current. Most carriers reach collector and produce collector current.
3. CB, CE and CC Configurations
A transistor can be connected in three basic configurations depending on which terminal is common to input and output circuits.
| Configuration | Input Terminals | Output Terminals | Main Feature |
|---|---|---|---|
| Common-base (CB) | Emitter-base | Collector-base | Low input resistance, voltage gain possible, current gain less than 1. |
| Common-emitter (CE) | Base-emitter | Collector-emitter | High current and voltage gain; output is phase reversed. |
| Common-collector (CC) | Base-collector | Emitter-collector | High input resistance; used as emitter follower. |
4. Current Gain and Relation between α and β
Common-base Current Gain α
Since IC is slightly less than IE, α is less than 1. Typical value is 0.95 to 0.99.
Common-emitter Current Gain β
β is large because a small base current controls a much larger collector current.
5. CE Transistor Characteristics
In common-emitter configuration, base-emitter side is input and collector-emitter side is output.
CE Input Characteristic
Graph between base current IB and base-emitter voltage VBE at constant VCE.
CE Output Characteristic
Graph between collector current IC and collector-emitter voltage VCE at constant base current IB.
6. Transistor as Amplifier
A transistor amplifier uses a small input signal to control a larger output signal. In active region, small change in input current produces a large change in collector current.
1. Common-base PNP Amplifier
Input is applied in the emitter-base circuit and output is taken from the collector-base circuit. Current gain is less than 1, but voltage gain may be high.
2. Common-base NPN Amplifier
Base is common to input and output. This configuration has low input resistance and high output resistance.
3. Common-emitter PNP Amplifier
Emitter is common to input and output. It gives current gain, voltage gain and power gain; polarities are according to p-n-p operation.
4. Common-emitter NPN Amplifier
Input is applied between base and emitter; output is taken between collector and emitter. CE amplifier gives high current gain, high voltage gain and 180° phase reversal.
Gains
Current gain Ai = ΔIout / ΔIin. Voltage gain Av = ΔVout / ΔVin. Power gain = Ai × Av.
Resistances
Input resistance ri = ΔVin / ΔIin. Output resistance ro = ΔVout / ΔIout.
Phase Reversal
In CE amplifier, output voltage is 180° out of phase with the input signal.
7. Transistor as Switch and Logic Applications
A transistor can behave like an electronic switch. It is OFF in cut-off region and ON in saturation region.
