Semiconductor Electronics Notes

Transistor and Amplifier

Premium coaching notes on transistor structure, p-n-p and n-p-n action, CB/CE/CC configurations, current gains, characteristics, amplifier action, switching, oscillator basics, numericals and PYQs.

NCERT Style DiagramsReference diagrams are embedded from the supplied source images for scientific accuracy.
Exam FormulasClear α, β, gain, resistance and transconductance formula boxes.
Practice ReadyNumericals and solved exam-style questions are included with final answers and tips.

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1. Transistor Structure

A junction transistor is a three-layer, two-junction semiconductor device. It has three terminals: emitter E, base B and collector C.

Emitter

Emitter is heavily doped and injects charge carriers into the base.

Base

Base is very thin and lightly doped. Only a small fraction of carriers recombine in the base.

Collector

Collector is moderately doped and physically larger. It collects most carriers coming from emitter.

n-p-n transistor and its circuit symbol
Fig. 14.60 n-p-n transistor and its circuit symbol.
p-n-p transistor and its circuit symbol
Fig. 14.61 p-n-p transistor and its circuit symbol.
Arrow rule: In n-p-n transistor, emitter arrow points out. In p-n-p transistor, emitter arrow points in.

2. PNP and NPN Transistor Action

For normal transistor action, emitter-base junction is forward biased and collector-base junction is reverse biased.

NPN Transistor

Electrons are majority carriers. Electrons are injected from n-type emitter into the thin p-type base. A small part recombines in the base producing IB, while most electrons reach the collector and produce IC.

Action of n-p-n transistor and its biasing
Fig. 14.63 Action of n-p-n transistor and its biasing.

PNP Transistor

Holes are majority carriers. In p-n-p transistor, holes are injected from emitter into base. A small percentage recombines in base and produces base current. Most carriers reach collector and produce collector current.

Action of p-n-p transistor and its biasing
Fig. 14.64 Action of p-n-p transistor and its biasing.
Current relation: IE = IB + IC

3. CB, CE and CC Configurations

A transistor can be connected in three basic configurations depending on which terminal is common to input and output circuits.

Common-base, common-emitter and common-collector connections
Fig. 14.65 Common-base, common-emitter and common-collector connections for n-p-n transistor.
ConfigurationInput TerminalsOutput TerminalsMain Feature
Common-base (CB)Emitter-baseCollector-baseLow input resistance, voltage gain possible, current gain less than 1.
Common-emitter (CE)Base-emitterCollector-emitterHigh current and voltage gain; output is phase reversed.
Common-collector (CC)Base-collectorEmitter-collectorHigh input resistance; used as emitter follower.

4. Current Gain and Relation between α and β

Common-base Current Gain α

alpha formula box
α formula at constant VCB.
α = ΔIC / ΔIE at constant VCB

Since IC is slightly less than IE, α is less than 1. Typical value is 0.95 to 0.99.

Common-emitter Current Gain β

beta formula box
β formula at constant VCE.
β = ΔIC / ΔIB at constant VCE

β is large because a small base current controls a much larger collector current.

Relation between alpha and beta
Relation between α and β.
α = β / (1 + β)
β = α / (1 - α)

5. CE Transistor Characteristics

In common-emitter configuration, base-emitter side is input and collector-emitter side is output.

Circuit for studying CE characteristics
Fig. 14.66 Circuit for studying the common emitter characteristics of an n-p-n transistor.

CE Input Characteristic

Graph between base current IB and base-emitter voltage VBE at constant VCE.

Input characteristics of CE n-p-n transistor
Fig. 14.67 Input characteristics of CE n-p-n transistor.
Input resistance ri = ΔVBE / ΔIB at constant VCE

CE Output Characteristic

Graph between collector current IC and collector-emitter voltage VCE at constant base current IB.

Output characteristic of CE n-p-n transistor
Fig. 14.68 Output characteristic of CE n-p-n transistor.
Output resistance ro = ΔVCE / ΔIC at constant IB
Regions: cut-off region, active region and saturation region are identified using transistor characteristics.

6. Transistor as Amplifier

A transistor amplifier uses a small input signal to control a larger output signal. In active region, small change in input current produces a large change in collector current.

The concept of an amplifier
Fig. 14.71 The concept of an amplifier.

1. Common-base PNP Amplifier

p-n-p transistor as a common base amplifier
p-n-p transistor as a common base amplifier.

Input is applied in the emitter-base circuit and output is taken from the collector-base circuit. Current gain is less than 1, but voltage gain may be high.

2. Common-base NPN Amplifier

n-p-n transistor as a common base amplifier
Fig. 14.72 n-p-n transistor as a common base amplifier.

Base is common to input and output. This configuration has low input resistance and high output resistance.

3. Common-emitter PNP Amplifier

p-n-p transistor as a common emitter amplifier
p-n-p transistor as a common emitter amplifier.

Emitter is common to input and output. It gives current gain, voltage gain and power gain; polarities are according to p-n-p operation.

4. Common-emitter NPN Amplifier

n-p-n transistor as a common emitter amplifier
Fig. 14.74 n-p-n transistor as a common emitter amplifier.

Input is applied between base and emitter; output is taken between collector and emitter. CE amplifier gives high current gain, high voltage gain and 180° phase reversal.

Gains

Current gain Ai = ΔIout / ΔIin. Voltage gain Av = ΔVout / ΔVin. Power gain = Ai × Av.

Resistances

Input resistance ri = ΔVin / ΔIin. Output resistance ro = ΔVout / ΔIout.

Phase Reversal

In CE amplifier, output voltage is 180° out of phase with the input signal.

Transconductance gm = ΔIC / ΔVBE

7. Transistor as Switch and Logic Applications

A transistor can behave like an electronic switch. It is OFF in cut-off region and ON in saturation region.